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Recovery of dry etching-induced damage in n-GaN by nitrogen plasma treatment at growth temperature

Author
WANG, X1 2 ; YU, G1 ; LEI, B1 2 ; WANG, X1 2 ; LIN, C1 2 ; SUI, Y1 2 ; MENG, S1 ; QI, M1 ; LI, A1
[1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China
[2] Graduate School, Chinese Academy of Science, Peking 100039, China
Source

Journal of electronic materials. 2007, Vol 36, Num 6, pp 697-701, 5 p ; ref : 18 ref

CODEN
JECMA5
ISSN
0361-5235
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
GaN Recovery etching
Keyword (fr)
Couche mince Dépendance température Effet Hall Endommagement Epitaxie jet moléculaire Gallium nitrure Gravure plasma Gravure sèche Microscopie force atomique Mécanisme croissance Méthode MOCVD Photoluminescence Plasma couplé inductivement Plasma thermique Propriété optique Propriété électrique Restauration(propriété) Semiconducteur III-V Température plasma Traitement par plasma Traitement thermique 5277B 8115G 8115H GaN
Keyword (en)
Thin films Temperature dependence Hall effect Damage Molecular beam epitaxy Gallium nitrides Plasma etching Dry etching Atomic force microscopy Growth mechanism MOCVD Photoluminescence Inductively coupled plasma Thermal plasma Optical properties Electrical properties Recovery(properties) III-V semiconductors Plasma temperature Plasma assisted processing Heat treatments
Keyword (es)
Grabado plasma Grabado seco Mecanismo crecimiento Plasma térmico Restauración(propiedad)
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B77 Plasma applications / 001B50B77B Etching and cleaning

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Discipline
Physics and materials science Physics of gases, plasmas and electric discharges
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18902552

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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