Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs
- Author
- KAWASHIMA, T1 ; NAGAI, T1 ; IIDA, D1 ; MIURA, A1 ; OKADOME, Y1 ; TSUCHIYA, Y1 ; IWAYA, M1 ; KAMIYAMA, S1 ; AMANO, H1 ; AKASAKI, I1
[1] Faculty of Science and Technology and 21st COE program Nano-Factory, Meijo University, 1-501, Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan - Conference title
- Physics and simulation of optoelectronic devices XV (22-25 January 2007, San Jose CA, US)
- Conference name
- Physics and simulation of optoelectronic devices. Conference (15 ; San Jose CA 2007)
- Author (monograph)
- Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
- Source
Proceedings of SPIE, the International Society for Optical Engineering. 2007 ; 1Vol, pp 64680S.1-64680S.8 ; ref : 14 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-6581-8
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham WA
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé binaire Croissance cristalline Diode électroluminescente Epitaxie phase vapeur Etude expérimentale Gallium nitrure Photoluminescence Rugosité Semiconducteur III-V 6172 8115H 8560J Ga N GaN
- Keyword (en)
- Binary compounds Crystal growth Light emitting diodes VPE Experimental study Gallium nitrides Photoluminescence Roughness III-V semiconductors
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18937306
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:106:\"Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"64680S.1\";s:8:\"\u0000*\u0000epage\";s:8:\"64680S.8\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"KAWASHIMA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:8:\"NAGAI, T\";i:1;s:7:\"IIDA, D\";i:2;s:8:\"MIURA, A\";i:3;s:10:\"OKADOME, Y\";i:4;s:11:\"TSUCHIYA, Y\";i:5;s:8:\"IWAYA, M\";i:6;s:11:\"KAMIYAMA, S\";i:7;s:8:\"AMANO, H\";i:8;s:10:\"AKASAKI, I\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-6581-8\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:89:\"Physics and simulation of optoelectronic devices XV (22-25 January 2007, San Jose CA, US)\";s:8:\"\u0000*\u0000title\";s:106:\"Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:106:\"Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"64680S.1\";s:8:\"\u0000*\u0000epage\";s:8:\"64680S.8\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"KAWASHIMA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:8:\"NAGAI, T\";i:1;s:7:\"IIDA, D\";i:2;s:8:\"MIURA, A\";i:3;s:10:\"OKADOME, Y\";i:4;s:11:\"TSUCHIYA, Y\";i:5;s:8:\"IWAYA, M\";i:6;s:11:\"KAMIYAMA, S\";i:7;s:8:\"AMANO, H\";i:8;s:10:\"AKASAKI, I\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-6581-8\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:89:\"Physics and simulation of optoelectronic devices XV (22-25 January 2007, San Jose CA, US)\";s:8:\"\u0000*\u0000title\";s:106:\"Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:106:\"Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"64680S.1\";s:8:\"\u0000*\u0000epage\";s:8:\"64680S.8\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"KAWASHIMA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:8:\"NAGAI, T\";i:1;s:7:\"IIDA, D\";i:2;s:8:\"MIURA, A\";i:3;s:10:\"OKADOME, Y\";i:4;s:11:\"TSUCHIYA, Y\";i:5;s:8:\"IWAYA, M\";i:6;s:11:\"KAMIYAMA, S\";i:7;s:8:\"AMANO, H\";i:8;s:10:\"AKASAKI, I\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-6581-8\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:89:\"Physics and simulation of optoelectronic devices XV (22-25 January 2007, San Jose CA, US)\";s:8:\"\u0000*\u0000title\";s:106:\"Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:106:\"Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"64680S.1\";s:8:\"\u0000*\u0000epage\";s:8:\"64680S.8\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"KAWASHIMA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:8:\"NAGAI, T\";i:1;s:7:\"IIDA, D\";i:2;s:8:\"MIURA, A\";i:3;s:10:\"OKADOME, Y\";i:4;s:11:\"TSUCHIYA, Y\";i:5;s:8:\"IWAYA, M\";i:6;s:11:\"KAMIYAMA, S\";i:7;s:8:\"AMANO, H\";i:8;s:10:\"AKASAKI, I\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-6581-8\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:89:\"Physics and simulation of optoelectronic devices XV (22-25 January 2007, San Jose CA, US)\";s:8:\"\u0000*\u0000title\";s:106:\"Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:106:\"Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"64680S.1\";s:8:\"\u0000*\u0000epage\";s:8:\"64680S.8\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"KAWASHIMA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:8:\"NAGAI, T\";i:1;s:7:\"IIDA, D\";i:2;s:8:\"MIURA, A\";i:3;s:10:\"OKADOME, Y\";i:4;s:11:\"TSUCHIYA, Y\";i:5;s:8:\"IWAYA, M\";i:6;s:11:\"KAMIYAMA, S\";i:7;s:8:\"AMANO, H\";i:8;s:10:\"AKASAKI, I\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-6581-8\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:89:\"Physics and simulation of optoelectronic devices XV (22-25 January 2007, San Jose CA, US)\";s:8:\"\u0000*\u0000title\";s:106:\"Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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