Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates
- Author
- STORM, D. F1 ; KATZER, D. S1 ; EVANS, K. R3 ; ROUSSOS, J. A1 ; MITTEREDER, J. A1 ; BASS, R1 ; BINARI, S. C1 ; LIN ZHOU2 ; SMITH, David J2 ; HANSER, D3 ; PREBLE, E. A3
[1] Electronics Science and Technology Division, Naval Research Laboratory, Code 6852, 4555 Overlook Avenue SW, Washington DC. 20375, United States
[2] School of Materials and Department of Physics, Arizona State University, Tempe, AZ 85287, United States
[3] Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, NC 27617, United States - Conference title
- Proceedings of the 4th International Workshop on Bulk Nitride Semiconductors IV (IWBNS): 17-22 October 2006, Makino, Shiga, Japan
- Conference name
- IWBNS International Workshop on Bulk Nitride Semiconductors IV (4 ; Makino, Shina 2006-10-17)
- Author (monograph)
- FREITAS, Jaime A (Editor)1 ; HANSER, Drew (Editor)2 ; KOUKITOU, Akinori (Editor)3
[1] Naval Research Laboratory, Washington, DC, United States
[2] Kyma Technologies, Raleigh, NC, United States
[3] Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan - Source
Journal of crystal growth. 2007, Vol 305, Num 2, pp 340-345, 6 p ; ref : 24 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A3. Hydride vapor phase epitaxy A3. Molecular beam epitaxy B1. Nitrides B2. Semiconducting gallium compounds B3. High electron mobility transistors
- Keyword (fr)
- Aluminium nitrure Caractéristique électrique Composé III-V Couche épitaxique Densité dislocation Dislocation Disruption Effet Hall Electrode commande Epitaxie jet moléculaire Epitaxie phase vapeur Etat surface Gallium composé Gallium nitrure Hydrure Hétérostructure Interface Mesure température Microscopie force atomique Microscopie électronique transmission Morphologie surface Nitrure Propriété électrique Puissance sortie Semiconducteur III-V Température électron Transistor mobilité électron élevée 7350 8115H 8530T AlGaN GaN Substrat GaN
- Keyword (en)
- Aluminium nitrides Electrical characteristic III-V compound Epitaxial layers Dislocation density Dislocations Breakdown Hall effect Gates Molecular beam epitaxy VPE Surface states Gallium compounds Gallium nitrides Hydrides Heterostructures Interfaces Temperature measurement Atomic force microscopy Transmission electron microscopy Surface morphology Nitrides Electrical properties Output power III-V semiconductors Electron temperature High electron mobility transistors
- Keyword (es)
- Característica eléctrica Compuesto III-V Potencia salida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18944135
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2007.04.003 
https://dx.doi.org/10.1016/j.jcrysgro.2007.04.003
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