Polarity dependence of AlN {0001} decomposition in flowing H2
- Author
- KUMAGAI, Yoshinao1 ; AKIYAMA, Kazuhiro2 ; TOGASHI, Rie2 ; MURAKAMI, Hisashi1 ; TAKEUCHI, Misaichi3 4 ; KINOSHITA, Toru5 ; TAKADA, Kazuya5 ; AOYAGI, Yoshinobu3 4 ; KOUKITU, Akinori1
[1] Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naku-cho, Koganei, Tokyo 184-8588, Japan
[2] Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
[3] Nonoscience Development and Support Team, RIKEN, 2-1 Hirosawa, Wuko, Saitama 351-0198, Japan
[4] Department of Electronics and Applied Physics. Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
[5] Research and Development Division, Tokuyuma Corporation, Shibuya Konno Blda., 3-3-1 Shibuya, Shibuya-ku. Tokyo 150-8383, Japan - Conference title
- Proceedings of the 4th International Workshop on Bulk Nitride Semiconductors IV (IWBNS): 17-22 October 2006, Makino, Shiga, Japan
- Conference name
- IWBNS International Workshop on Bulk Nitride Semiconductors IV (4 ; Makino, Shina 2006-10-17)
- Author (monograph)
- FREITAS, Jaime A (Editor)1 ; HANSER, Drew (Editor)2 ; KOUKITOU, Akinori (Editor)3
[1] Naval Research Laboratory, Washington, DC, United States
[2] Kyma Technologies, Raleigh, NC, United States
[3] Tokyo University of Agriculture and Technology, Koganei, Tokyo, Japan - Source
Journal of crystal growth. 2007, Vol 305, Num 2, pp 366-371, 6 p ; ref : 32 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 68.55.Jk; 81.05.Ea; 81.15.Kk; 82.30.Lp Al. Surface processes; A3. Vapor phase epitaxy; Bl. Nitrides; B2. Semiconducting aluminum compounds
- Keyword (fr)
- Aluminium nitrure Composé III-V Décomposition phase Effet température Epitaxie phase vapeur Nitrure Polarité Propriété thermique Semiconducteur III-V Stabilité thermique 6860D 8115K AlN Substrat saphir
- Keyword (en)
- Aluminium nitrides III-V compound Phase decomposition Temperature effects VPE Nitrides Polarity Thermal properties III-V semiconductors Thermal stability
- Keyword (es)
- Compuesto III-V Descomposición fase Polaridad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic / 001B60H60D Thermal stability; thermal effects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18944139
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2007.04.005 
https://dx.doi.org/10.1016/j.jcrysgro.2007.04.005
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