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Random dopant fluctuation in limited-width FinFET technologies

Author
CHIANG, Meng-Hsueh1 ; LIN, Jeng-Nan1 ; KIM, Keunwoo2 ; CHUANG, Ching-Te2
[1] Department of Electronic Engineering, National Ilan University, I-Lan 260, Taiwan, Province of China
[2] IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, United States
Source

I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 8, pp 2055-2060, 6 p ; ref : 15 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
FinFETS random dopant fluctuation (RDF)
Keyword (fr)
Miniaturisation Méthode numérique Technologie autoalignée Transistor MOSFET Transistor grille double
Keyword (en)
Miniaturization Numerical method Self aligned technology MOSFET Dual gate transistor
Keyword (es)
Miniaturización Método numérico Tecnología rejilla autoalineada Transistor de compuerta doble
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18951464

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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