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Dynamic shadow mask technique for device fabrication in UHV

Author
EGGER, Stefan1
[1] International Center for Young Scientists, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Conference title
Solar hydrogen and nanotechnology (14-17 August 2006)
Conference name
Solar hydrogen and nanotechnology. Conference (2006)
Author (monograph)
Vayssieres, Lionel (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
Source

Proceedings of SPIE, the International Society for Optical Engineering. 2006 ; 1Vol, pp 63400Z.1-63400Z.6 ; ref : 11 ref

CODEN
PSISDG
ISSN
0277-786X
ISBN
0-8194-6419-8
Scientific domain
Electronics; Energy; Optics; Physics
Publisher
SPIE, Bellingham WA
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Contamination Dépôt sous vide Epaisseur Fabrication microélectronique Masque Nanostructure Nanotechnologie Semiconducteur Traitement surface Ultravide 8540H
Keyword (en)
Contamination Vacuum deposition Thickness Microelectronic fabrication Mask Nanostructure Nanotechnology Semiconductor materials Surface treatment Ultrahigh vacuum
Keyword (es)
Contaminación Depósito bajo vacío Espesor Fabricación microeléctrica Máscara Nanoestructura Nanotecnología Semiconductor(material) Tratamiento superficie Ultravacío
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18955596

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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