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Deposition of highly oriented lanthanum nickel oxide thin film on silicon wafer by CSD

Author
SUZUKI, H1 ; NAOE, T1 ; MIYAZAKI, H2 ; OTA, T3
[1] Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
[2] Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue, Shimane 690-8504, Japan
[3] Ceramics Research Laboratory, Nagoya Institute of Technology, 10-6-29 Asahigaoka, Tajimi, Gifu 507-0071, Japan
Conference title
Refereed reports Electroceramics X 2006
Conference name
International conference on Electroceramics (10 ; Toledo 2006-06-18)
Author (monograph)
FERNANDEZ, José F (Editor)1 ; VILLEGAS, Marina (Editor)1
[1] Ceramics for Smart Systems Group, Electroceramic Department, Instituto de Cerámica y Vidrio, CSIC, C/Kelsen 5, 28049 Madrid, Spain
Source

Journal of the European Ceramic Society. 2007, Vol 27, Num 13-15, pp 3769-3773, 5 p ; ref : 17 ref

ISSN
0955-2219
Scientific domain
Chemical industry parachemical industry
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Conference Paper
Language
English
Author keyword
Chemical solution deposition Films
Keyword (fr)
Commande processus Composé minéral Couche mince Croissance cristalline en solution Diffraction RX Etude expérimentale Lanthane Nickel Oxyde Mixte Lanthane oxyde Microscopie force atomique Microscopie électronique balayage Nickel oxyde Orientation cristalline Orientation préférentielle Oxyde Propriété électrique Relation fabrication propriété Relation fabrication structure La Ni O LaNiO3
Keyword (en)
Process control Inorganic compounds Thin films Crystal growth from solutions XRD Experimental study Lanthanum Nickel Oxides Mixed Lanthanum oxides Atomic force microscopy Scanning electron microscopy Nickel oxides Crystal orientation Preferred orientation Oxides Electrical properties Fabrication property relation Fabrication structure relation
Keyword (es)
Mixto Orientación preferencial Relación fabricación propiedad Relación fabricación estructura
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61L Other inorganic semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Pacs
7361L Other inorganic semiconductors

Pacs
8115L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18958920

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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