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EXAFS investigation on Sb incorporation effects to electrical transport in SnO2 thin films deposited by sol-gel

Autor
GERALDO, V1 2 ; BRIOIS, V3 ; SCALVI, L. V. A1 ; SANTILLI, C. V4
[1] Dep. Fisica FC, U. Estadual Paulista UNESP, C.P. 473, 17033-360 Bauru, SP, Brazil
[2] Instituto de Fisica de São Carlos-USP, C.P. 369, 13560-970 São Carlos, SP, Brazil
[3] Synchrotron SOLEIL, L'Orme des Merisiers, BP48, 91192 Gif-sur-Yvette, France
[4] Química, U. Estadual Paulista UNESP, C.P. 355, 14801 -907Araraquara, SP, Brazil
Titulo de la conferencia
Refereed reports Electroceramics X 2006
Nombre de la conferencia
International conference on Electroceramics (10 ; Toledo 2006-06-18)
Autor ( monografía)
FERNANDEZ, José F (Editor)1 ; VILLEGAS, Marina (Editor)1
[1] Ceramics for Smart Systems Group, Electroceramic Department, Instituto de Cerámica y Vidrio, CSIC, C/Kelsen 5, 28049 Madrid, Spain
Fuente

Journal of the European Ceramic Society. 2007, Vol 27, Num 13-15, pp 4265-4268, 4 p ; ref : 10 ref

ISSN
0955-2219
Campo Científico
Chemical industry parachemical industry
Editor
Elsevier, Oxford
País de la publicación
United Kingdom
Tipo de documento
Conference Paper
Idioma
English
Palabra clave de autor
EXAFS Sol-gel Tin dioxide films
Palabra clave (fr)
Addition antimoine Composé minéral Couche mince Dopage Dépôt immersion Etude expérimentale Méthode en solution Oxyde d'étain Oxyde Procédé sol gel Propriété électrique Préparation chimique Relation composition propriété Spectrométrie EXAFS Spectrométrie XANES Valence O Sn SnO2:Sb
Palabra clave (in)
Antimony additions Inorganic compounds Thin films Doping Dip coating Experimental study Growth from solution Tin oxide Oxides Sol-gel process Electrical properties Chemical preparation Property composition relationship EXAFS spectrometry XANES spectrometry Valence
Palabra clave (es)
Doping Método en solución Estaño óxido Relación composición propiedad Espectrometría EXAFS Espectrometría XANES
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61L Other inorganic semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Pacs
6855J Structure and morphology; thickness

Pacs
7361L Other inorganic semiconductors

Pacs
8115L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Disciplina
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
18959026

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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