Formation rate of vacancy-oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation
- Author
- EMTSEV, V. V1 ; EMTSEV, V. V1 ; OGANESYAN, G. A1
[1] Solid State Electronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa, 26, St. Petersburg 194021, Russian Federation - Conference title
- Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)
- Conference name
- Coordination Action on Defects Relevant to Engineering Silicon-Based Devices. International Workshop (2 ; Kalives, Crete 2006-09-08)
- Author (monograph)
- EVANS-FREEMAN, Jan (Editor)1
European Commission, CADRES Project, Europe (Organiser of meeting)
[1] Sheffield Hallam University, Sheffield, United Kingdom - Source
Journal of materials science. Materials in electronics. 2007, Vol 18, Num 7, pp 701-704, 4 p ; ref : 10 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Conference Paper
- Language
- Russian
- Keyword (fr)
- Irradiation gamma Lacune Microscopie électronique Oxygène Silicium Température ambiante Traitement thermique O Si
- Keyword (en)
- Gamma irradiation Vacancy Electron microscopy Oxygen Silicon Room temperature Heat treatment
- Keyword (es)
- Irradiación gama Cavidad Microscopía electrónica Oxígeno Silicio Temperatura ambiente Tratamiento térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18965017
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10854-006-9109-0 
https://dx.doi.org/10.1007/s10854-006-9109-0
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