MOS Si/Ge photodetectors
- Author
- LIN, C.-H1 ; LIU, C. W1 2
[1] Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, Province of China
[2] National Nano Device Laboratories, Hsinchu, Taiwan, Province of China - Conference title
- Optoelectronic devices (physics, fabrication, and application III)
- Conference name
- Optoelectronic devices (2006)
- Author (monograph)
- Piprek, Joachim (Editor); Wang, Jian Jim (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2006 ; 1Vol, pp 636806.1-636806.12 ; ref : 22 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 0-8194-6466-X
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham WA
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Alliage Ge Si Dispositif optoélectronique Déformation mécanique Détecteur IR Détecteur rayonnement Fonction réponse Germanium Oxyde métallique Photodétecteur Point quantique Silicium Transition interbande Transition intrabande 0757K 8560G Ge/Si Si/SiGe
- Keyword (en)
- Ge-Si alloys Optoelectronic device Mechanical deformation Infrared detector Radiation detector Response function Germanium Metal oxides Photodetector Quantum dot Silicon Interband transition Intraband transition
- Keyword (es)
- Dispositivo optoelectrónico Deformación mecánica Detector rayos infrarrojos Detector rayo Función respuesta Germanio Fotodetector Punto cuántico Silicio Transición interbanda Transición intrabanda
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G57 Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques / 001B00G57K Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18971632
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Install on your browser
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:24:\"MOS Si\/Ge photodetectors\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2006\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"636806.1\";s:8:\"\u0000*\u0000epage\";s:9:\"636806.12\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"LIN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C.-H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:9:\"LIU, C. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-6466-X\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:66:\"Optoelectronic devices (physics, fabrication, and application III)\";s:8:\"\u0000*\u0000title\";s:24:\"MOS Si\/Ge photodetectors\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:24:\"MOS Si\/Ge photodetectors\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2006\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"636806.1\";s:8:\"\u0000*\u0000epage\";s:9:\"636806.12\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"LIN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C.-H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:9:\"LIU, C. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-6466-X\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:66:\"Optoelectronic devices (physics, fabrication, and application III)\";s:8:\"\u0000*\u0000title\";s:24:\"MOS Si\/Ge photodetectors\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:24:\"MOS Si\/Ge photodetectors\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2006\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"636806.1\";s:8:\"\u0000*\u0000epage\";s:9:\"636806.12\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"LIN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C.-H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:9:\"LIU, C. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-6466-X\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:66:\"Optoelectronic devices (physics, fabrication, and application III)\";s:8:\"\u0000*\u0000title\";s:24:\"MOS Si\/Ge photodetectors\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:24:\"MOS Si\/Ge photodetectors\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2006\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"636806.1\";s:8:\"\u0000*\u0000epage\";s:9:\"636806.12\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"LIN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C.-H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:9:\"LIU, C. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-6466-X\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:66:\"Optoelectronic devices (physics, fabrication, and application III)\";s:8:\"\u0000*\u0000title\";s:24:\"MOS Si\/Ge photodetectors\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:24:\"MOS Si\/Ge photodetectors\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2006\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"636806.1\";s:8:\"\u0000*\u0000epage\";s:9:\"636806.12\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"LIN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"C.-H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:9:\"LIU, C. W\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-6466-X\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:66:\"Optoelectronic devices (physics, fabrication, and application III)\";s:8:\"\u0000*\u0000title\";s:24:\"MOS Si\/Ge photodetectors\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
