Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se
- Author
- TANAKA, T1 ; YAMAGUCHI, T2 ; WAKAHARA, A1 ; YOSHIDA, A1
[1] Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan
[2] Department of Electrical Engineering, Wakayama College of Technology, Nada-cho, Gobo 644, Japan - Conference title
- Proceedings of the Thin Films and Electronic Materials and Processing sessions from the 14th International Vacuum Congress, Birmingham, UK, 31 August-4 September, 1998
- Conference name
- IVC-14: International Vacuum Congress (14 ; Birmingham 1998-08-31)
- Author (monograph)
- HOWSON, R. P (Editor); PETTY, M (Editor)1 ; JACKMAN, R. B (Editor)2 ; YASUDA, Y (Editor)
British Vacuum Council, United Kingdom (Funder/Sponsor)
Institute of Physics, London, United Kingdom (Funder/Sponsor)
International Union for Vacuum Science, Technique and Applications, International (Funder/Sponsor)
[1] Loughborough Surface Analysis Ltd, United Kingdom
[2] University College of London, United Kingdom - Source
Thin solid films. 1999, Vol 343-4, pp 320-323 ; ref : 11 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Bande interdite Composition chimique Composé ternaire Couche mince Croissance cristalline en phase vapeur Cuivre séléniure Effet température Etude expérimentale Indium séléniure Modèle Mécanisme croissance Propriété optique Pulvérisation haute fréquence Semiconducteur II-VI Substrat Cu In Se CuIn3Se5 CuInSe2 Composé minéral Métal transition composé
- Keyword (en)
- Energy gap Chemical composition Ternary compounds Thin films Crystal growth from vapors Copper selenides Temperature effects Experimental study Indium selenides Models Growth mechanism Optical properties Radiofrequency sputtering II-VI semiconductors Substrates Inorganic compounds Transition element compounds
- Keyword (es)
- Modelo Mecanismo crecimiento Pulverización alta frecuencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1897512
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0040-6090(98)01593-4 
https://dx.doi.org/10.1016/S0040-6090(98)01593-4
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