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Fabrication and characterization of Fe3+-doped titania semiconductor electrodes with p-n homojunction devices

Author
LIAU, Leo Chau-Kuang1 ; LIN, Chu-Che1
[1] Yuan Ze Fuel Cell Center, Department of Chemical Engineering and Materials Science, Yuan Ze University, Chung-Li 320, Taiwan, Province of China
Source

Applied surface science. 2007, Vol 253, Num 21, pp 8798-8801, 4 p ; ref : 12 ref

ISSN
0169-4332
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Fe3+-doped TiO2 I-V measurement TiO2 electrode p-n homojunction
Keyword (fr)
Addition fer Caractéristique courant tension Dimension particule Diode Homojonction p n Matériau dopé Procédé sol gel Titane oxyde Traitement thermique O Ti TiO2:Fe Composé minéral Métal transition composé
Keyword (en)
Iron additions IV characteristic Particle size Diodes p n homojunctions Doped materials Sol-gel process Titanium oxides Heat treatments Inorganic compounds Transition element compounds
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes

Pacs
7340 Electronic transport in interface structures

Pacs
8530K Junction diodes

Discipline
Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18980659

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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