Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions
- Author
- NOULIS, T1 ; SISKOS, S1 ; SARRABAYROUSE, G2
[1] Electronics Laboratory of Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
[2] Laboratoire d'Analyse et d'Architecture des Systèmes LAAS -CNRS, 7 Avenue du colonel Roche, 31077 Toulouse, France - Source
Microelectronics and reliability. 2007, Vol 47, Num 8, pp 1222-1227, 6 p ; ref : 28 ref
- CODEN
- MCRLAS
- ISSN
- 0026-2714
- Scientific domain
- Electronics
- Publisher
- Elsevier, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bruit basse fréquence Etude comparative Evaluation performance Mesure bruit Programme SPICE Technologie NMOS Technologie PMOS Transistor MOS Transistor MOSFET Modèle BSIM
- Keyword (en)
- 1/f noise Comparative study Performance evaluation Noise measurement SPICE NMOS technology PMOS technology MOS transistor MOSFET BSIM model
- Keyword (es)
- Ruido baja frecuencia Estudio comparativo Evaluación prestación Tecnología NMOS Tecnología PMOS Transistor MOS Modelo BSIM
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18980934
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/j.microrel.2006.09.021 
https://dx.doi.org/10.1016/j.microrel.2006.09.021
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2006.09.021\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:112:\"Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Microelectronics and reliability\";s:9:\"\u0000*\u0000stitle\";s:21:\"Microelectron. reliab\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"47\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"1222\";s:8:\"\u0000*\u0000epage\";s:4:\"1227\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0026-2714\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"NOULIS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:9:\"SISKOS, S\";i:1;s:16:\"SARRABAYROUSE, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCRLAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:112:\"Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2006.09.021\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:112:\"Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Microelectronics and reliability\";s:9:\"\u0000*\u0000stitle\";s:21:\"Microelectron. reliab\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"47\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"1222\";s:8:\"\u0000*\u0000epage\";s:4:\"1227\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0026-2714\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"NOULIS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:9:\"SISKOS, S\";i:1;s:16:\"SARRABAYROUSE, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCRLAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:112:\"Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2006.09.021\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2006.09.021\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:112:\"Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Microelectronics and reliability\";s:9:\"\u0000*\u0000stitle\";s:21:\"Microelectron. reliab\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"47\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"1222\";s:8:\"\u0000*\u0000epage\";s:4:\"1227\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0026-2714\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"NOULIS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:9:\"SISKOS, S\";i:1;s:16:\"SARRABAYROUSE, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCRLAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:112:\"Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2006.09.021\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:112:\"Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Microelectronics and reliability\";s:9:\"\u0000*\u0000stitle\";s:21:\"Microelectron. reliab\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"47\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"1222\";s:8:\"\u0000*\u0000epage\";s:4:\"1227\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0026-2714\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"NOULIS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:9:\"SISKOS, S\";i:1;s:16:\"SARRABAYROUSE, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCRLAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:112:\"Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2006.09.021\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:112:\"Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Microelectronics and reliability\";s:9:\"\u0000*\u0000stitle\";s:21:\"Microelectron. reliab\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"47\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"1222\";s:8:\"\u0000*\u0000epage\";s:4:\"1227\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0026-2714\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"NOULIS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"T\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:9:\"SISKOS, S\";i:1;s:16:\"SARRABAYROUSE, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCRLAS\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:112:\"Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
