Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy
- Author
- WANG, J.-B1 ; DING, D1 ; JOHNSON, S. R1 ; YU, S.-Q1 ; ZHANG, Y.-H1
[1] Center for Solid State Electronics Research and Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287, United States - Issue title
- Frontiers in molecular-beam epitaxy toward novel devices
- Author (monograph)
- GRAHN, Holger T (Editor)1 ; KOCH, Reinhold (Editor)1 ; TRAMPERT, Achim (Editor)1
[1] Paul Drude Institut for Solid State Electronics, Berlin, Germany - Source
Physica status solidi. B. Basic research. 2007, Vol 244, Num 8, pp 2740-2751, 12 p ; ref : 25 ref
- CODEN
- PSSBBD
- ISSN
- 0370-1972
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium arséniure Antimoine Effet température Emission spontanée Epitaxie jet moléculaire Equation vitesse Gallium arséniure Hétérostructure Loi puissance Photoluminescence Rendement quantique 7867P AlGaAs GaAs
- Keyword (en)
- Aluminium arsenides Antimony Temperature effects Spontaneous emission Molecular beam epitaxy Rate equation Gallium arsenides Heterostructures Power law Photoluminescence Quantum yield
- Keyword (es)
- Ecuación velocidad Ley poder
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H67 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures / 001B70H67P Multilayers, superlattices
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18981176
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssb.200675612 
https://dx.doi.org/10.1002/pssb.200675612
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200675612\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:136:\"Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:40:\"Physica status solidi. B. Basic research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, B, Basic res\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:3:\"244\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"2740\";s:8:\"\u0000*\u0000epage\";s:4:\"2751\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0370-1972\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"WANG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J.-B\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:7:\"DING, D\";i:1;s:13:\"JOHNSON, S. R\";i:2;s:8:\"YU, S.-Q\";i:3;s:11:\"ZHANG, Y.-H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSBBD\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:56:\"Frontiers in molecular-beam epitaxy toward novel devices\";s:8:\"\u0000*\u0000title\";s:136:\"Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:5:\"Wiley\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"12\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200675612\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:136:\"Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:40:\"Physica status solidi. B. Basic research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, B, Basic res\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:3:\"244\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"2740\";s:8:\"\u0000*\u0000epage\";s:4:\"2751\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0370-1972\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"WANG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J.-B\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:7:\"DING, D\";i:1;s:13:\"JOHNSON, S. R\";i:2;s:8:\"YU, S.-Q\";i:3;s:11:\"ZHANG, Y.-H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSBBD\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:56:\"Frontiers in molecular-beam epitaxy toward novel devices\";s:8:\"\u0000*\u0000title\";s:136:\"Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:5:\"Wiley\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"12\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200675612\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200675612\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:136:\"Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:40:\"Physica status solidi. B. Basic research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, B, Basic res\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:3:\"244\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"2740\";s:8:\"\u0000*\u0000epage\";s:4:\"2751\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0370-1972\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"WANG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J.-B\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:7:\"DING, D\";i:1;s:13:\"JOHNSON, S. R\";i:2;s:8:\"YU, S.-Q\";i:3;s:11:\"ZHANG, Y.-H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSBBD\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:56:\"Frontiers in molecular-beam epitaxy toward novel devices\";s:8:\"\u0000*\u0000title\";s:136:\"Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:5:\"Wiley\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"12\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200675612\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:136:\"Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:40:\"Physica status solidi. B. Basic research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, B, Basic res\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:3:\"244\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"2740\";s:8:\"\u0000*\u0000epage\";s:4:\"2751\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0370-1972\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"WANG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J.-B\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:7:\"DING, D\";i:1;s:13:\"JOHNSON, S. R\";i:2;s:8:\"YU, S.-Q\";i:3;s:11:\"ZHANG, Y.-H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSBBD\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:56:\"Frontiers in molecular-beam epitaxy toward novel devices\";s:8:\"\u0000*\u0000title\";s:136:\"Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:5:\"Wiley\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"12\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssb.200675612\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:136:\"Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:40:\"Physica status solidi. B. Basic research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, B, Basic res\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:3:\"244\";s:8:\"\u0000*\u0000issue\";s:1:\"8\";s:8:\"\u0000*\u0000spage\";s:4:\"2740\";s:8:\"\u0000*\u0000epage\";s:4:\"2751\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0370-1972\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"WANG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J.-B\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:7:\"DING, D\";i:1;s:13:\"JOHNSON, S. R\";i:2;s:8:\"YU, S.-Q\";i:3;s:11:\"ZHANG, Y.-H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSBBD\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:56:\"Frontiers in molecular-beam epitaxy toward novel devices\";s:8:\"\u0000*\u0000title\";s:136:\"Determination and improvement of spontaneous emission quantum efficiency in GaAs\/AlGaAs heterostructures grown by molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:5:\"Wiley\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"12\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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