As good as it gets : Optimal fab design and deployment
- Author
- BENAVIDES, D. L1 ; DULEY, J. R2 ; JOHNSON, B. E3
[1] Cornerstone Research, Menlo Park, CA 94025, United States
[2] Hewlett-Packard Company, Palo Alto, CA 9430, United States
[3] Stanford University, Stanford, CA 94305-4023, United States - Conference title
- International Symposium on Semiconductor Manufacturing (ISSM'98)
- Conference name
- International Symposium on Semiconductor Manufacturing (ISSM'98) (ISSM'98) (Tokyo 1998-10-07)
- Author (monograph)
- HATTORI, T (Editor); DOERING, R. R (Editor)
- Source
IEEE transactions on semiconductor manufacturing. 1999, Vol 12, Num 3, pp 281-287 ; ref : 11 ref
- ISSN
- 0894-6507
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Analyse sensibilité Aspect économique Capacité production Circuit intégré Coût construction Demande marché Epargne Fabrication microélectronique Gestion Incertitude Industrie électronique Investissement Méthodologie Optimisation Planification production Risque Usine fabrication
- Keyword (en)
- Sensitivity analysis Economic aspect Production capacity Integrated circuit Construction cost Demand(contract) Saving Microelectronic fabrication Management Uncertainty Electronics industry Investment Methodology Optimization Production planning Risk Factory
- Keyword (es)
- Análisis sensibilidad Aspecto económico Capacidad producción Circuito integrado Costo construcción Demanda mercado Ahorro Fabricación microeléctrica Gestión Incertidumbre Industria electrónica Inversión Metodología Optimización Programación producción Riesgo Fábrica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03A General (including economical and industrial fields)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1899116
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/66.778191 
https://dx.doi.org/10.1109/66.778191
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