High-reliability tungsten-stacked via process with fully converted TiAl3 formation annealing
- Author
- SHOHJI, R1 ; UDA, M1 ; NAKAMURA, T1 ; YODA, T1 ; ITOH, Y1
[1] Semiconductor Operations Yasu, IBM Japan, Ltd., Shiga 520-2392, Japan - Conference title
- International Symposium on Semiconductor Manufacturing (ISSM'98)
- Conference name
- International Symposium on Semiconductor Manufacturing (ISSM'98) (ISSM'98) (Tokyo 1998-10-07)
- Author (monograph)
- HATTORI, T (Editor); DOERING, R. R (Editor)
- Source
IEEE transactions on semiconductor manufacturing. 1999, Vol 12, Num 3, pp 302-312 ; ref : 21 ref
- ISSN
- 0894-6507
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Alliage binaire Aluminium alliage Composé intermétallique Contrainte compression Contrainte thermomécanique Contrainte traction Couche Décoloration Effet température Empilement Fabrication microélectronique Fiabilité Maximum Profil profondeur Recuit thermique Résistivité couche Silicium Oxyde Séparation Titane Nitrure Titane alliage Trou interconnexion Tungstène Valeur Al Ti N Ti O Si SiO2 TiAl3 TiN
- Keyword (en)
- Binary alloy Aluminium alloy Intermetallic compound Compressive stress Thermomechanical stress Tensile stress Layer Discoloration Temperature effect Stacking Microelectronic fabrication Reliability Maximum Depth profile Thermal annealing Sheet resistivity Silicon Oxides Separation Titanium Nitrides Titanium alloy Via hole Tungsten Value
- Keyword (es)
- Aleación binaria Aluminio aleación Compuesto intermetálico Tensión compresión Tensión termomecánica Tensión traccíon Capa Decoloración Efecto temperatura Apilamiento Fabricación microeléctrica Fiabilidad Máximo Perfil profundidad Recocido térmico Resistividad capa Silicio Óxido Separación Titanio Nitruro Titanio aleación Agujero interconexión Wolframio Valor
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1899119
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/66.778195 
https://dx.doi.org/10.1109/66.778195
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