Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures
- Author
- PAKHOMOV, Georgy L1 ; LEONOV, Evgeny S1 ; KLIMOV, Alexander Yu1
[1] Institute for Physics of Microstructures of the Russian Academy of Sciences, GSP-105, Nizhny Novgorod 603600, Russian Federation - Source
Microelectronics journal. 2007, Vol 38, Num 6-7, pp 682-685, 4 p ; ref : 30 ref
- ISSN
- 0959-8324
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- Russian
- Author keyword
- Heterostructures Photoconductivity Phthalocyanines
- Keyword (fr)
- Caractéristique courant tension Effet redresseur Hétérostructure Matériau dopé Microélectronique Photoconductivité Semiconducteur type n Semiconducteur type p
- Keyword (en)
- Voltage current curve Rectifier effect Heterostructures Doped materials Microelectronics Photoconductivity n type semiconductor p type semiconductor
- Keyword (es)
- Característica corriente tensión Efecto rectificador Microelectrónica Fotoconductividad Semiconductor tipo n Semiconductor tipo p
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18991197
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mejo.2007.05.010 
https://dx.doi.org/10.1016/j.mejo.2007.05.010
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