On the kinetics of generation of point defects in the Si-SiO2 system
- Author
- KROPMAN, D1 ; ABRU, U2 ; SAMOSON, A3 ; KÄRNER, T4
[1] Estonian Maritime Academy, Mustakivi 25, 0039Tallinn, Estonia
[2] Tondi Electronics, 0013Tallinn, Estonia
[3] Institute of Chemical Physics and Biophysics, Tallinn, Estonia
[4] Institute of Physics, University of Tartu, Tartu, Estonia - Conference title
- Proceedings of the Thin Films and Electronic Materials and Processing sessions from the 14th International Vacuum Congress, Birmingham, UK, 31 August-4 September, 1998
- Conference name
- IVC-14: International Vacuum Congress (14 ; Birmingham 1998-08-31)
- Author (monograph)
- HOWSON, R. P (Editor); PETTY, M (Editor)1 ; JACKMAN, R. B (Editor)2 ; YASUDA, Y (Editor)
British Vacuum Council, United Kingdom (Funder/Sponsor)
Institute of Physics, London, United Kingdom (Funder/Sponsor)
International Union for Vacuum Science, Technique and Applications, International (Funder/Sponsor)
[1] Loughborough Surface Analysis Ltd, United Kingdom
[2] University College of London, United Kingdom - Source
Thin solid films. 1999, Vol 343-4, pp 412-415 ; ref : 6 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Cinétique Défaut ponctuel Etude expérimentale Fabrication microélectronique Formation défaut Interface solide solide Matériau semiconducteur Oxydation Silicium oxyde Silicium Spectre RMN Spectre RPE O Si Si SiO2 Composé minéral Non métal
- Keyword (en)
- Kinetics Point defects Experimental study Microelectronic fabrication Defect formation Solid-solid interfaces Semiconductor materials Oxidation Silicon oxides Silicon NMR spectra EPR spectra Inorganic compounds Nonmetals
- Keyword (es)
- Fabricación microeléctrica Formación defecto
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72C Kinetics of defect formation and annealing
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72J Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35D Composition; defects and impurities
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1899438
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0040-6090(98)01721-0 
https://dx.doi.org/10.1016/S0040-6090(98)01721-0
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