Static and transient electrical properties of (111) diamond p-n diodes
- Author
- TAVARES, C1 2 ; MURET, P1 ; KOIZUMI, S2 ; JOMARD, F3
[1] Département Nanosciences, Institut Néel, CNRS, BP 166, Grenoble-Université, 38042 Grenoble, France
[2] NIMS, 1-1 Namiki, Tsukuba 305-0044, Japan
[3] GEMAC-CNRS, 1 place Aristide Briand, 92195 Meudon, France - Conference name
- International Hasselt Diamond Workshop 2007 - SBDD XII (12 ; Diepenbeek-Hasselt 2007-02-28)
- Source
Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 9, pp 2985-2990, 6 p ; ref : 12 ref
- ISSN
- 1862-6300
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition bore Addition phosphore Caractéristique capacité tension Caractéristique courant tension Contact ohmique DLTS Diamant Dopage Effet redresseur Etat défaut Gravure ionique réactive Impureté Jonction p n Spectre SIMS 7155C 7340E
- Keyword (en)
- Boron additions Phosphorus additions CV characteristic IV characteristic Ohmic contacts DLTS Diamonds Doping Rectification Defect states Reactive ion etching Impurities p n junctions Secondary ion mass spectra
- Keyword (es)
- Doping Grabado iónico reactivo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40E Rectification
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19055189
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.200776335 
https://dx.doi.org/10.1002/pssa.200776335
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