GaN : from fundamentals to applications
- Author
- PANKOVE, J. I1
[1] ASTRALUX, 2500 Central Ave., Boulder, CO 80301, United States - Conference title
- 2nd European Conference on Silicon Carbide and Related Materials, September 2-4, 1998, Montpellier, France
- Conference name
- ECSCRM'98: European Conference on Silicon Carbide and Related Materials (2 ; Montpellier 1998-09-02)
- Author (monograph)
- CAMASSEL, J (Editor); CONTRERAS, S (Editor); ROBERT, J. L (Editor)
- Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 305-309 ; ref : 15 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Application Bande interdite Cathode émission champ Dispositif électroluminescent Dopage Détecteur UV Etude expérimentale Gallium nitrure Nitrure Semiconducteur III-V Structure bande Transistor bipolaire Composé minéral
- Keyword (en)
- Application Energy gap Field emitter Electroluminescent devices Doping Ultraviolet detectors Experimental study Gallium nitrides Nitrides III-V semiconductors Band structure Bipolar transistors Inorganic compounds
- Keyword (es)
- Aplicación Cátodo emisión campo Doping
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55E Iii-v semiconductors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1910383
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0921-5107(98)00523-6 
https://dx.doi.org/10.1016/S0921-5107(98)00523-6
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