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GaN : from fundamentals to applications

Author
PANKOVE, J. I1
[1] ASTRALUX, 2500 Central Ave., Boulder, CO 80301, United States
Conference title
2nd European Conference on Silicon Carbide and Related Materials, September 2-4, 1998, Montpellier, France
Conference name
ECSCRM'98: European Conference on Silicon Carbide and Related Materials (2 ; Montpellier 1998-09-02)
Author (monograph)
CAMASSEL, J (Editor); CONTRERAS, S (Editor); ROBERT, J. L (Editor)
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 305-309 ; ref : 15 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Application Bande interdite Cathode émission champ Dispositif électroluminescent Dopage Détecteur UV Etude expérimentale Gallium nitrure Nitrure Semiconducteur III-V Structure bande Transistor bipolaire Composé minéral
Keyword (en)
Application Energy gap Field emitter Electroluminescent devices Doping Ultraviolet detectors Experimental study Gallium nitrides Nitrides III-V semiconductors Band structure Bipolar transistors Inorganic compounds
Keyword (es)
Aplicación Cátodo emisión campo Doping
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55E Iii-v semiconductors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Pacs
7155E III-V semiconductors

Discipline
Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1910383

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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