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Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists

Author
SULLIVAN, Daniel1 ; OKAWA, Yusuke2 ; SUGAWARA, Kazuhiko2 ; BENES, Zdenek1 ; KOTANI, Jun2
[1] IBM, Systems and Technology Group, 1000 River Road, Essex Junction, VT 05452, United States
[2] Toppan Electronics, Inc., 1000 River Road, Essex Junction, VT 05452, United States
Conference title
Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)
Conference name
Photomask technology (2006)
Author (monograph)
Martin, Patrick M (Editor); Naber, Robert J (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
Source

Proceedings of SPIE, the International Society for Optical Engineering. 2006 ; 2Vol, pp 634905.1-634905.9 ; ref : 9 ref

CODEN
PSISDG
ISSN
0277-786X
ISBN
0-8194-6444-9
Scientific domain
Electronics; Optics; Physics
Publisher
SPIE, Bellingham, Washington
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Effet proximité Fabrication microélectronique Lithographie faisceau électron Masque Photolithographie Revêtement antiréfléchissant Résist amplification chimique Taille critique Technologie avancée
Keyword (en)
Proximity effect Microelectronic fabrication Electron beam lithography Mask Photolithography Antireflection coating Chemically amplified resist Critical size Advanced technology
Keyword (es)
Efecto proximidad Fabricación microeléctrica Litografía haz electrón Máscara Fotolitografía Revestimiento antirreflexión Resistencia amplificación química Tecnología avanzada
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19103985

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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