Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists
- Author
- SULLIVAN, Daniel1 ; OKAWA, Yusuke2 ; SUGAWARA, Kazuhiko2 ; BENES, Zdenek1 ; KOTANI, Jun2
[1] IBM, Systems and Technology Group, 1000 River Road, Essex Junction, VT 05452, United States
[2] Toppan Electronics, Inc., 1000 River Road, Essex Junction, VT 05452, United States - Conference title
- Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)
- Conference name
- Photomask technology (2006)
- Author (monograph)
- Martin, Patrick M (Editor); Naber, Robert J (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2006 ; 2Vol, pp 634905.1-634905.9 ; ref : 9 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 0-8194-6444-9
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham, Washington
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Effet proximité Fabrication microélectronique Lithographie faisceau électron Masque Photolithographie Revêtement antiréfléchissant Résist amplification chimique Taille critique Technologie avancée
- Keyword (en)
- Proximity effect Microelectronic fabrication Electron beam lithography Mask Photolithography Antireflection coating Chemically amplified resist Critical size Advanced technology
- Keyword (es)
- Efecto proximidad Fabricación microeléctrica Litografía haz electrón Máscara Fotolitografía Revestimiento antirreflexión Resistencia amplificación química Tecnología avanzada
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19103985
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Install on your browser
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:104:\"Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2006\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"634905.1\";s:8:\"\u0000*\u0000epage\";s:8:\"634905.9\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"SULLIVAN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Daniel\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:13:\"OKAWA, Yusuke\";i:1;s:18:\"SUGAWARA, Kazuhiko\";i:2;s:13:\"BENES, Zdenek\";i:3;s:11:\"KOTANI, Jun\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-6444-9\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:76:\"Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)\";s:8:\"\u0000*\u0000title\";s:104:\"Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists\";s:8:\"\u0000*\u0000place\";s:22:\"Bellingham, Washington\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:104:\"Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2006\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"634905.1\";s:8:\"\u0000*\u0000epage\";s:8:\"634905.9\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"SULLIVAN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Daniel\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:13:\"OKAWA, Yusuke\";i:1;s:18:\"SUGAWARA, Kazuhiko\";i:2;s:13:\"BENES, Zdenek\";i:3;s:11:\"KOTANI, Jun\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-6444-9\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:76:\"Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)\";s:8:\"\u0000*\u0000title\";s:104:\"Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists\";s:8:\"\u0000*\u0000place\";s:22:\"Bellingham, Washington\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:104:\"Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2006\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"634905.1\";s:8:\"\u0000*\u0000epage\";s:8:\"634905.9\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"SULLIVAN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Daniel\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:13:\"OKAWA, Yusuke\";i:1;s:18:\"SUGAWARA, Kazuhiko\";i:2;s:13:\"BENES, Zdenek\";i:3;s:11:\"KOTANI, Jun\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-6444-9\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:76:\"Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)\";s:8:\"\u0000*\u0000title\";s:104:\"Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists\";s:8:\"\u0000*\u0000place\";s:22:\"Bellingham, Washington\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:104:\"Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2006\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"634905.1\";s:8:\"\u0000*\u0000epage\";s:8:\"634905.9\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"SULLIVAN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Daniel\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:13:\"OKAWA, Yusuke\";i:1;s:18:\"SUGAWARA, Kazuhiko\";i:2;s:13:\"BENES, Zdenek\";i:3;s:11:\"KOTANI, Jun\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-6444-9\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:76:\"Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)\";s:8:\"\u0000*\u0000title\";s:104:\"Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists\";s:8:\"\u0000*\u0000place\";s:22:\"Bellingham, Washington\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:104:\"Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2006\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"634905.1\";s:8:\"\u0000*\u0000epage\";s:8:\"634905.9\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"SULLIVAN\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Daniel\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:13:\"OKAWA, Yusuke\";i:1;s:18:\"SUGAWARA, Kazuhiko\";i:2;s:13:\"BENES, Zdenek\";i:3;s:11:\"KOTANI, Jun\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"0-8194-6444-9\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:76:\"Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)\";s:8:\"\u0000*\u0000title\";s:104:\"Chemical flare long range proximity effects in photomask manufacturing with chemically amplified resists\";s:8:\"\u0000*\u0000place\";s:22:\"Bellingham, Washington\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
