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Finding the needle in the haystack : Using full-chip process window analysis to qualify competing SRAF placement strategies for 65 nm

Author
MASON, Mark1 ; BEST, Shane1 ; ZHANG, Gary1 ; TERRY, Mark1 ; SOPER, Robert1
[1] Texas Instruments, Inc., 13363 N. Central Expressway, Dallas, Texas 75243, United States
Conference title
Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)
Conference name
Photomask technology (2006)
Author (monograph)
Martin, Patrick M (Editor); Naber, Robert J (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
Source

Proceedings of SPIE, the International Society for Optical Engineering. 2006 ; 2Vol, pp 63491X.1-63491X.11

CODEN
PSISDG
ISSN
0277-786X
ISBN
0-8194-6444-9
Scientific domain
Electronics; Optics; Physics
Publisher
SPIE, Bellingham, Washington
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Etude cas Fabrication microélectronique Fonction erreur Formation image Haute résolution Imprimabilité Lithographie Masque Miniaturisation Modèle 2 dimensions Correction optique de proximité
Keyword (en)
Case study Microelectronic fabrication Error function Imaging High resolution Printability Lithography Mask Miniaturization Two dimensional model Optical proximity correction
Keyword (es)
Estudio caso Fabricación microeléctrica Función error Formación imagen Alta resolucion Imprimibilidad Litografía Máscara Miniaturización Modelo 2 dimensiones Corrección de proximidad óptica
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19104043

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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