CD and profile metrology of EUV masks using scatterometry based optical digital profilometry
- Author
- CHO, Sung-Yong1 ; YEDUR, Sanjay2 ; KWON, Michael2 ; TABET, Milad3
[1] Photomask team, Samsung electronics. Co. Ltd., San #16 Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701, Korea, Republic of
[2] Timbre Technologies, inc., 2953 Bunker Hill Lane, #301, Santa Clara, CA 95054, United States
[3] Nanometrics, Inc., 1550 Buckeye Drive, Milpitas CA 95035, United States - Conference title
- Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)
- Conference name
- Photomask technology (2006)
- Author (monograph)
- Martin, Patrick M (Editor); Naber, Robert J (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2006 ; 2Vol, pp 63492I.1-63492I.9 ; ref : 4 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 0-8194-6444-9
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham, Washington
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Constante optique Déformation Détection défaut Ellipsométrie Fabrication microélectronique Incidence oblique Largeur raie Lithographie UV Logiciel Masque Mesure optique Microscopie force atomique Microscopie électronique balayage Miniaturisation Multicouche Méthode mesure Photolithographie Photorésist Rayonnement UV extrême Recherche développement Revêtement Réflectométrie Résist Taille critique 0779
- Keyword (en)
- Optical constant Deformation Defect detection Ellipsometry Microelectronic fabrication Oblique incidence Line width UV lithography Software Mask Optical measurement Atomic force microscopy Scanning electron microscopy Miniaturization Multiple layer Measurement method Photolithography Photoresist Vacuum ultraviolet radiation Research and development Coatings Reflectometry Resist Critical size
- Keyword (es)
- Constante óptica Deformación Detección imperfección Elipsometría Fabricación microeléctrica Incidencia oblicua Anchura raya espectral Litografía UV Logicial Máscara Medida óptica Microscopía fuerza atómica Microscopía electrónica barrido Miniaturización Capa múltiple Método medida Fotolitografía Fotorresistencia Radiación ultravioleta extrema Investigación desarrollo Revestimiento Reflectometría Resistencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G79 Scanning probe microscopes, components and techniques
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19104062
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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