Multi-layer resist system for 45nm node and beyond (II)
- Author
- FUJIMURA, Yukihiro1 ; MORIMOTO, Jumpei; ENOMOTO, Tomoyuki3 ; SAKAGUCHI, Takahiro; NAGAI, Masaki; MANOSHIRO, Asuka; SHIMIZU, Mochihiro; TAKAMIZAWA, Hideyoshi; HASHIMOTO, Masahiro2 ; SHIRATORI, Hiroshi; HORII, Katsuhiko; YOKOYA, Yasunori; OHKUBO, Yasushi
[1] Dai Nippon Printing Co,.Ltd 2-2-1, Fukuoka, Fujimino, Saitama, 356-8507, Japan
[2] Blanks division, HOYA Corporation, 3280 Nakamaru, Nagasaka, Hokuto, Yamanashi, 408-8550, Japan
[3] Nissan Chemical Industries, Kowa Hitostubashi Building, 7-1-3, Kanda-Nishi, Chiyoda, Tokyo, 101-0054, Japan - Conference title
- Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)
- Conference name
- Photomask technology (2006)
- Author (monograph)
- Martin, Patrick M (Editor); Naber, Robert J (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2006 ; 2Vol, pp 634936.1-634936.8 ; ref : 1 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 0-8194-6444-9
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham, Washington
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Fabrication microélectronique Gravure sèche Haute résolution Miniaturisation Multicouche Revêtement Résist
- Keyword (en)
- Microelectronic fabrication Dry etching High resolution Miniaturization Multiple layer Coatings Resist
- Keyword (es)
- Fabricación microeléctrica Grabado seco Alta resolucion Miniaturización Capa múltiple Revestimiento Resistencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19104083
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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