OPC to account for thick mask effect using simplified boundary layer model
- Author
- KIM, Sangwook1 ; KIM, Young-Chang1 ; SUH, Sungsoo1 ; LEE, Sook1 ; LEE, Sungwoo1 ; LEE, Sukjoo1 ; CHO, Hanku1 ; MOON, Jootae1 ; COBB, Jonathan2 ; LEE, Sooryong2
[1] Cho, Jootae Moon Samsung Electronics Co. LTD. San #16 Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701, Korea, Republic of
[2] Synopsys, Inc. 1301 S. Mopac Expressway Suite 200, Austin, TX 78746, United States - Conference title
- Photomask technology 2006 (19-22 September, 2006, Monterey, California, USA)
- Conference name
- Photomask technology (2006)
- Author (monograph)
- Martin, Patrick M (Editor); Naber, Robert J (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2006 ; 2Vol, pp 63493I.1-63493I.8 ; ref : 11 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 0-8194-6444-9
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham, Washington
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Champ proche Couche limite Photolithographie Taille critique Valeur efficace Correction optique de proximité
- Keyword (en)
- Near field Boundary layer Photolithography Critical size Root mean square value Optical proximity correction
- Keyword (es)
- Campo próximo Capa límite Fotolitografía Valor eficaz Corrección de proximidad óptica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19104093
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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