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Electrostatic chucking of EUVL reticles

Author
NATARAJU, Madhura1 ; SOHN, Jaewoong1 ; MIKKELSON, Andrew R1 ; ENGELSTAD, Roxann L1 ; TURNER, Kevin T1 ; VAN PESKI, Chris K2 ; ORVEK, Kevin J2
[1] Computational Mechanics Center, University of Wisconsin, Madison, WI, 53706, United States
[2] SEMATECH Inc., 2706 Montopolis Dr, Austin, TX, 78741, United States
Conference title
Emerging lithographic technologies XI (27 February- 1 March 2007, San Jose, California, USA)
Conference name
Emerging lithographic technologies (11 ; San Jose CA 2007)
Author (monograph)
Lercel, Michael James (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
SEMATECH, Inc, United States (Organiser of meeting)
Source

Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65170Y.1-65170Y.8 ; ref : 3 ref

CODEN
PSISDG
ISSN
0277-786X
ISBN
978-0-8194-6636-5
Scientific domain
Electronics; Optics; Physics
Publisher
SPIE, Bellingham WA
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Analyse paramétrique Fabrication microélectronique Implémentation Lithographie UV Masque Modélisation Méthode numérique Méthode élément fini Photolithographie Rayonnement UV extrême Surface arrière
Keyword (en)
Parametric analysis Microelectronic fabrication Implementation UV lithography Mask Modeling Numerical method Finite element method Photolithography Vacuum ultraviolet radiation Back surface
Keyword (es)
Fabricación microeléctrica Implementación Litografía UV Máscara Modelización Método numérico Método elemento finito Fotolitografía Radiación ultravioleta extrema Superficie atrás
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19104457

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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