CD budget analysis on hole pattern in EUVL
- Author
- IRIKI, Nobuyuki1 ; AOYAMA, Hajime1 ; TANAKA, Toshihiko1
[1] Semiconductor Leading Edge Technologies Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan - Conference title
- Emerging lithographic technologies XI (27 February- 1 March 2007, San Jose, California, USA)
- Conference name
- Emerging lithographic technologies (11 ; San Jose CA 2007)
- Author (monograph)
- Lercel, Michael James (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
SEMATECH, Inc, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65172K.1-65172K.11 ; ref : 6 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-6636-5
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham WA
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Evaluation performance Fabrication microélectronique Lithographie UV Photolithographie Rayonnement UV extrême Résist Technologie tranchée
- Keyword (en)
- Performance evaluation Microelectronic fabrication UV lithography Photolithography Vacuum ultraviolet radiation Resist Trench technology
- Keyword (es)
- Evaluación prestación Fabricación microeléctrica Litografía UV Fotolitografía Radiación ultravioleta extrema Resistencia Tecnología trinchera
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19104504
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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