Lithographic metrics for the determination of intrinsic resolution limits in EUV resists
- Author
- NAULLEAU, Patrick P1 2 ; ANDERSEN, Christopher N3 ; LA FONTAINE, Bruno4 ; KIM, Ryoung-Han4 ; WALLOW, Tom4
[1] Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States
[2] College of Nanoscale Science and Engineering, University at Albany, NY 12203, United States
[3] Applied Science & Technology Department, University of California, Berkeley, CA 94720, United States
[4] Advanced Micro Devices, Sunnyvale, CA 94088, United States - Conference title
- Emerging lithographic technologies XI (27 February- 1 March 2007, San Jose, California, USA)
- Conference name
- Emerging lithographic technologies (11 ; San Jose CA 2007)
- Author (monograph)
- Lercel, Michael James (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
SEMATECH, Inc, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65172N.1-65172N.6 ; ref : 16 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-6636-5
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham WA
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Echelle grande Evaluation performance Fabrication microélectronique Fonction transfert modulation Lithographie Longueur diffusion Rayonnement UV extrême Rugosité Résist amplification chimique
- Keyword (en)
- Large scale Performance evaluation Microelectronic fabrication Modulation transfer function Lithography Diffusion length Vacuum ultraviolet radiation Roughness Chemically amplified resist
- Keyword (es)
- Escala grande Evaluación prestación Fabricación microeléctrica Función transferencia modulación Litografía Longitud difusión Radiación ultravioleta extrema Rugosidad Resistencia amplificación química
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19104507
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Install on your browser
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"Lithographic metrics for the determination of intrinsic resolution limits in EUV resists\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"65172N.1\";s:8:\"\u0000*\u0000epage\";s:8:\"65172N.6\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"NAULLEAU\";s:10:\"\u0000*\u0000aufirst\";s:9:\"Patrick P\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:23:\"ANDERSEN, Christopher N\";i:1;s:18:\"LA FONTAINE, Bruno\";i:2;s:15:\"KIM, Ryoung-Han\";i:3;s:11:\"WALLOW, Tom\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-6636-5\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:92:\"Emerging lithographic technologies XI (27 February- 1 March 2007, San Jose, California, USA)\";s:8:\"\u0000*\u0000title\";s:88:\"Lithographic metrics for the determination of intrinsic resolution limits in EUV resists\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"Lithographic metrics for the determination of intrinsic resolution limits in EUV resists\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"65172N.1\";s:8:\"\u0000*\u0000epage\";s:8:\"65172N.6\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"NAULLEAU\";s:10:\"\u0000*\u0000aufirst\";s:9:\"Patrick P\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:23:\"ANDERSEN, Christopher N\";i:1;s:18:\"LA FONTAINE, Bruno\";i:2;s:15:\"KIM, Ryoung-Han\";i:3;s:11:\"WALLOW, Tom\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-6636-5\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:92:\"Emerging lithographic technologies XI (27 February- 1 March 2007, San Jose, California, USA)\";s:8:\"\u0000*\u0000title\";s:88:\"Lithographic metrics for the determination of intrinsic resolution limits in EUV resists\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"Lithographic metrics for the determination of intrinsic resolution limits in EUV resists\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"65172N.1\";s:8:\"\u0000*\u0000epage\";s:8:\"65172N.6\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"NAULLEAU\";s:10:\"\u0000*\u0000aufirst\";s:9:\"Patrick P\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:23:\"ANDERSEN, Christopher N\";i:1;s:18:\"LA FONTAINE, Bruno\";i:2;s:15:\"KIM, Ryoung-Han\";i:3;s:11:\"WALLOW, Tom\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-6636-5\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:92:\"Emerging lithographic technologies XI (27 February- 1 March 2007, San Jose, California, USA)\";s:8:\"\u0000*\u0000title\";s:88:\"Lithographic metrics for the determination of intrinsic resolution limits in EUV resists\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"Lithographic metrics for the determination of intrinsic resolution limits in EUV resists\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"65172N.1\";s:8:\"\u0000*\u0000epage\";s:8:\"65172N.6\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"NAULLEAU\";s:10:\"\u0000*\u0000aufirst\";s:9:\"Patrick P\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:23:\"ANDERSEN, Christopher N\";i:1;s:18:\"LA FONTAINE, Bruno\";i:2;s:15:\"KIM, Ryoung-Han\";i:3;s:11:\"WALLOW, Tom\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-6636-5\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:92:\"Emerging lithographic technologies XI (27 February- 1 March 2007, San Jose, California, USA)\";s:8:\"\u0000*\u0000title\";s:88:\"Lithographic metrics for the determination of intrinsic resolution limits in EUV resists\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"Lithographic metrics for the determination of intrinsic resolution limits in EUV resists\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"65172N.1\";s:8:\"\u0000*\u0000epage\";s:8:\"65172N.6\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"NAULLEAU\";s:10:\"\u0000*\u0000aufirst\";s:9:\"Patrick P\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:23:\"ANDERSEN, Christopher N\";i:1;s:18:\"LA FONTAINE, Bruno\";i:2;s:15:\"KIM, Ryoung-Han\";i:3;s:11:\"WALLOW, Tom\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-6636-5\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:92:\"Emerging lithographic technologies XI (27 February- 1 March 2007, San Jose, California, USA)\";s:8:\"\u0000*\u0000title\";s:88:\"Lithographic metrics for the determination of intrinsic resolution limits in EUV resists\";s:8:\"\u0000*\u0000place\";s:13:\"Bellingham WA\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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