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Characteristics and prevention of pattern collapse in EUV lithography

Author
CHANG, Wook1 ; KIM, Eun-Jin1 ; KANG, Young-Min1 ; PARK, Seung-Wook1 ; LIM, Chang-Moon2 ; WON, Ki-Tak3 ; KIM, Jai-Soon3 ; OH, Hye-Keun1
[1] Department of Applied Physics, Hanyang University, Ansan, 426-791, Korea, Republic of
[2] Hynix Semiconductor Inc, Icheon, 467-701, Korea, Republic of
[3] Seoul National University, Seoul 151-747, Korea, Republic of
Conference title
Emerging lithographic technologies XI (27 February- 1 March 2007, San Jose, California, USA)
Conference name
Emerging lithographic technologies (11 ; San Jose CA 2007)
Author (monograph)
Lercel, Michael James (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
SEMATECH, Inc, United States (Organiser of meeting)
Source

Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65172S.1-65172S.7 ; ref : 2 ref

CODEN
PSISDG
ISSN
0277-786X
ISBN
978-0-8194-6636-5
Scientific domain
Electronics; Optics; Physics
Publisher
SPIE, Bellingham WA
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Fabrication microélectronique Force adhérence Largeur raie Lithographie UV Photolithographie Photorésist Rapport aspect Rayonnement UV extrême Résist
Keyword (en)
Microelectronic fabrication Adhesive strength Line width UV lithography Photolithography Photoresist Aspect ratio Vacuum ultraviolet radiation Resist
Keyword (es)
Fabricación microeléctrica Fuerza adherencia Anchura raya espectral Litografía UV Fotolitografía Fotorresistencia Relación dimensional Radiación ultravioleta extrema Resistencia
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19104510

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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