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Industrial aspects of GaN/SiC blue light emitting diodes in Europe

Author
HÄRLE, V1 ; HILLER, N2 ; KUGLER, S1 ; HAHN, B1 ; STATH, N1
[1] Siemens AG HL OS T, Wernerwerkstr. 2, 93049 Regensburg, Germany
[2] Siemens AG HL OC, Wernerwerkstr. 2, 93049 Regensburg, Germany
Conference title
2nd European Conference on Silicon Carbide and Related Materials, September 2-4, 1998, Montpellier, France
Conference name
ECSCRM'98: European Conference on Silicon Carbide and Related Materials (2 ; Montpellier 1998-09-02)
Author (monograph)
CAMASSEL, J (Editor); CONTRERAS, S (Editor); ROBERT, J. L (Editor)
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 310-313 ; ref : 7 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Coût production Diode électroluminescente Gallium nitrure Industrie électronique Rayonnement visible Silicium carbure Europe
Keyword (en)
Production cost Light emitting diode Gallium nitride Electronics industry Visible radiation Silicon carbide Europe
Keyword (es)
Coste producción Diodo electroluminescente Galio nitruro Industria electrónica Radiación visible Silicio carburo Europa
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1910467

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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