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Refinement of the subthreshold slope modeling for advanced bulk CMOS devices

Author
POUYDEBASQUE, Arnaud1 ; CHARBUILLET, Clément2 ; GWOZIECKI, Romain3 ; SKOTNICKI, Thomas2
[1] NXP Semiconductors, 38926 Crolles, France
[2] STMicroelectronics, 38926 Crolles, France
[3] Laboratoire d'Electronique et des Technologies de l'Information (LETI), Commissariat à l'Energie Atomique (CEA), 38054 Grenoble, France
Source

I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 10, pp 2723-2729, 7 p ; ref : 16 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
MOSFET short-channel effects subthreshold slope voltage-doping transformation (VDT)
Keyword (fr)
Canal court Dopage Endommagement Modélisation Méthode analytique Méthode semiempirique Technologie MOS complémentaire Technologie avancée Transistor MOSFET Canal long Cathode virtuelle
Keyword (en)
Short channel Doping Damaging Modeling Analytical method Semiempirical method Complementary MOS technology Advanced technology MOSFET Long channel Virtual cathode
Keyword (es)
Canal corto Doping Deterioración Modelización Método analítico Método semiempírico Tecnología MOS complementario Tecnología avanzada Canal largo Cátodo virtual
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19105872

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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