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Mechanism of operation of Josephson junctions made from HTcmaterials by ion modification

Author
TINCHEV, Savcho S1
[1] Institute of Electronics, Bulgarian Academy of Sciences, Sofia 1784, Bulgaria
Conference title
Proceedings of the 8th International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors - M2S-HTSC VIII, Dresden, Germany, July 9-14, 2006. Part 2
Conference name
M2S-HTSC VIII : International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors (8 ; Dresden 2006-07-09)
Author (monograph)
BÜCHNER, Bernd (Editor); FINK, Jörg (Editor)
Source

Physica. C. Superconductivity. 2007, Vol 460-462, Num 2, pp 1477-1478, 2 p ; ref : 22 ref

ISSN
0921-4534
Scientific domain
Crystallography; Electronics; Electrical engineering; Condensed state physics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
HTc Josephson junctions Ion beam modification
Keyword (fr)
Effet Josephson Faisceau ion Profil profondeur Simulation ordinateur Transition supraconductrice
Keyword (en)
Josephson effect Ion beams Depth profiles Computerized simulation Superconducting transitions
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70D Superconductivity / 001B70D50 Proximity effects, weak links, tunneling phenomena, and josephson effects, adreev effect, sn and sns junctions

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19106430

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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