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Optical investigation of residual doping species in 6H and 4H-SiC layers grown by chemical vapor deposition

Author
NEYRET, E1 2 ; FERRO, G2 ; JUILLAGUET, S1 ; BLUET, J. M2 3 ; JAUSSAUD, C2 ; CAMASSEL, J1
[1] Groupe d'Etude des Semiconducteurs, UM2-CNRS, cc074, 34095 Montpellier, France
[2] LETI-CEA, Département de Microtechnologie, 17 rue des Martyrs, 38054 Grenoble, France
[3] LMGP-ENSPG, Domaine Universitaire, 38054 St Martin d'Hères, France
Conference title
2nd European Conference on Silicon Carbide and Related Materials, September 2-4, 1998, Montpellier, France
Conference name
ECSCRM'98: European Conference on Silicon Carbide and Related Materials (2 ; Montpellier 1998-09-02)
Author (monograph)
CAMASSEL, J (Editor); CONTRERAS, S (Editor); ROBERT, J. L (Editor)
Source

Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 253-257 ; ref : 12 ref

ISSN
0921-5107
Scientific domain
Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Contamination Couche mince Dopage Dépôt chimique phase vapeur Etude expérimentale Impureté résiduelle Matériau semiconducteur Mode opératoire Photoluminescence Silicium carbure C Si SiC Composé minéral
Keyword (en)
Contamination Thin films Doping CVD Experimental study Residual impurity Semiconductor materials Operating mode Photoluminescence Silicon carbides Inorganic compounds
Keyword (es)
Doping Impureza residual Método operatorio
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72W Doping and impurity implantation in other materials

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pacs
8115G Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1912441

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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