Exciton optoelectronic transistor
- Author
- HIGH, A. A1 ; HAMMACK, A. T1 ; BUTOV, L. V1 ; HANSON, M2 ; GOSSARD, A. C2
[1] Department of Physics, University of California at San Diego, La Jolla, California 92093-0319, United States
[2] Materials Department, University of California at Santa Barbara, Santa Barbara, California 93106-5050, United States - Source
Optics letters. 2007, Vol 32, Num 17, pp 2466-2468, 3 p ; ref : 16 ref
- CODEN
- OPLEDP
- ISSN
- 0146-9592
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Optical Society of America, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit intégré Dispositif optoélectronique Exciton Optoélectronique Traitement information Transistor 8530P
- Keyword (en)
- Integrated circuit Optoelectronic device Exciton Optoelectronics Information processing Transistor
- Keyword (es)
- Circuito integrado Dispositivo optoelectrónico Excitón Optoelectrónica Procesamiento información Transistor
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19132327
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1364/OL.32.002466 
https://dx.doi.org/10.1364/OL.32.002466
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