Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition
- Author
- XIAOYAN WANG1 ; XIAOLIANG WANG1 ; GUOXIN HU1 ; BAOZHU WANG1 ; ZHIYONG MA1 ; HONGLING XIAO1 ; CUIMEI WANG1 ; JUNXUE RAN1 ; JIANPING LI1
[1] Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China - Source
Microelectronics journal. 2007, Vol 38, Num 8-9, pp 838-841, 4 p ; ref : 17 ref
- ISSN
- 0959-8324
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- AlxGa1-xN High Al content MOCVD Photodetector
- Keyword (fr)
- Cathodoluminescence Diagramme rotation Diffraction RX Dispositif optoélectronique Epitaxie Fabrication microélectronique Facteur transmission Fréquence coupure Haute résolution Microscopie force atomique Méthode MOCVD Photodétecteur Surface rugueuse
- Keyword (en)
- Cathodoluminescence Rocking curve X ray diffraction Optoelectronic device Epitaxy Microelectronic fabrication Transmittance Cut off frequency High resolution Atomic force microscopy MOCVD Photodetector Rough surface
- Keyword (es)
- Catodoluminiscencia Diagrama rotación Difracción RX Dispositivo optoelectrónico Epitaxia Fabricación microeléctrica Factor transmisión Frecuencia corte Alta resolucion Microscopía fuerza atómica Fotodetector Superficie rugosa
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19149375
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mejo.2007.07.090 
https://dx.doi.org/10.1016/j.mejo.2007.07.090
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