Raman scattering study of undoped and As-doped GaN grown with different III/V ratios
- Author
- IBANEZ, J1 ; PASTOR, D1 ; ALARCON-LLADO, E1 ; CUSCO, R1 ; ARTUS, L1 ; NOVIKOV, S. V2 ; FOXON, C. T2
[1] Institut Jaume Almera, Consell Superior d'Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n, 08028 Barcelona, Catalonia, Spain
[2] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom - Source
Semiconductor science and technology. 2007, Vol 22, Num 10, pp 1145-1150, 6 p ; ref : 30 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition arsenic Agrégat atomique Couche mince Couche épitaxique Diffusion Dopage Effet contrainte Epitaxie jet moléculaire Gallium nitrure Mode phonon Stoechiométrie Structure domaine GaN
- Keyword (en)
- Arsenic additions Atomic clusters Thin films Epitaxial layers Scattering Doping Stress effects Molecular beam epitaxy Gallium nitrides Phonon mode Stoichiometry Domain structure
- Keyword (es)
- Doping Modo fonón
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60C Lattice dynamics / 001B60C22 Phonons in low-dimensional structures and small particles
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19153703
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/22/10/011 
https://dx.doi.org/10.1088/0268-1242/22/10/011
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