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Fabrication of one-dimensional trenched GaN nanowires and their interconnections

Author
LEBEDEV, V1 ; CENGHER, D1 ; FISCHER, M1 ; TONISCH, K1 ; CIMALLA, V1 ; NIEBELSCHÜTZ, M1 ; AMBACHER, O1
[1] Institute of Micro-and Nanotechnologies, Technical University Ilmenau, 98684 Ilmenau, Germany
Source

Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 10, pp 3387-3391, 5 p ; ref : 17 ref

ISSN
1862-6300
Scientific domain
Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Wiley-VCH, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Caractéristique courant tension Croissance sélective Gallium nitrure Interconnexion Méthode MOCVD Nanofil Photolithographie Surface plane GaN
Keyword (en)
IV characteristic Selective growth Gallium nitrides Interconnections MOCVD Nanowires Photolithography Plane surface
Keyword (es)
Superficie plana
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Discipline
Electronics Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19154289

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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