Monte Carlo simulation of THz frequency power generation in notched n +-n- -n-n + 4H-SiC structures
- Author
- ZHAO, J. H1 ; GRUZINSKIS, V1 ; MICKEVICIUS, R1 ; SHIKTOROV, P2 ; STARIKOV, E2
[1] Department of Electrical and Computer Engineering and CAIP Center, Rutgers University, Piscataway, NJ 08855, United States
[2] Semiconductor Physics Institute, Goshtauto 11, 2600 Vilnius, Lithuania - Conference title
- 2nd European Conference on Silicon Carbide and Related Materials, September 2-4, 1998, Montpellier, France
- Conference name
- ECSCRM'98: European Conference on Silicon Carbide and Related Materials (2 ; Montpellier 1998-09-02)
- Author (monograph)
- CAMASSEL, J (Editor); CONTRERAS, S (Editor); ROBERT, J. L (Editor)
- Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 287-290 ; ref : 11 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Bande conduction Champ intense Effet champ électrique Etude expérimentale Générateur hyperfréquence Jonction n n+ Mobilité porteur charge Méthode Monte Carlo Phénomène transport Silicium carbure Bande non parabolique C Si SiC
- Keyword (en)
- Conduction band High field Electric field effect Experimental study Microwave generator n n+ junction Charge carrier mobility Monte Carlo method Transport process Silicon carbide
- Keyword (es)
- Banda conducción Campo intenso Efecto campo eléctrico Estudio experimental Generador hiperfrecuencia Unión n n+ Movilidad portador carga Método Monte Carlo Fenómeno transporte Silicio carburo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02B Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1917055
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0921-5107(98)00519-4 
https://dx.doi.org/10.1016/S0921-5107(98)00519-4
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