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Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films

Author
GONCALVES, G1 ; ELANGOVAN, E1 ; BARQUINHA, P1 ; PEREIRA, L1 ; MARTINS, R1 ; FORTUNATE, E1
[1] Departamento de Ciencia dos Materials, Faculdade de Ciencias e Tecnologia, Universidade Nova de Lisboa and CEMOP, Campus da Caparica, 2829-516 Caparica, Portugal
Conference title
First International Symposium on Transparent Conducting Oxides: 1st IS TCO 2006
Conference name
IS-TCO 2006 : International Symposium on Transparent Conducting Oxides (1 ; Island of Crete 2006-10-23)
Author (monograph)
KIRIAKIDIS, George (Editor)1 ; BARATON, Marie-Isabelle (Editor)2 ; MAO, Samuel (Editor)3
[1] Physics Dpt. Univ. of Crete, IESL/FORTH, Voutes, PO Box 1385, Heraklion 71110 Crete, Greece
[2] University of Limoges, France
[3] University of Berkeley-California, United States
Source

Thin solid films. 2007, Vol 515, Num 24, pp 8562-8566, 5 p ; ref : 21 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Author keyword
Annealing treatments Electrical and optical properties Transparent conductive oxides
Keyword (fr)
Addition zinc Bande interdite Caractéristique électrique Couche mince Dépôt physique phase vapeur Dépôt pulvérisation Effet température Etain oxyde Facteur transmission Gallium oxyde Indium Etain Oxyde Indium Zinc Oxyde Indium oxyde Polycristal Propriété optique Propriété électrique Propriété électronique Pulvérisation cathodique Recuit thermique Résistivité couche Spectre absorption Zinc oxyde 7320 7350 7866 8115C
Keyword (en)
Zinc additions Energy gap Electrical characteristic Thin films Physical vapor deposition Sputter deposition Temperature effects Tin oxides Transmittance Gallium oxides Indium Tin Oxides Indium Zinc Oxides Indium oxides Polycrystals Optical properties Electrical properties Electronic properties Cathode sputtering Thermal annealing Sheet resistivity Absorption spectra Zinc oxides
Keyword (es)
Característica eléctrica Factor transmisión Propiedad electrónica Recocido térmico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19171759

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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