Fabrication of doped nano-electromechanical systems
- Author
- SCHEIBLE, Dominik V1 ; HUA QIN2 ; KIM, Hyun-Seok2 ; BLICK, Robert H2
[1] Center for Nano-Science, Ludwig-Maximilians-University, Geschwister Scholl Platz 1, 80539 Munich, Germany
[2] Electrical & Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, United States - Source
Physica status solidi. Rapid research letters (Print). 2007, Vol 1, Num 5, pp 205-207, 3 p ; ref : 12 ref
- ISSN
- 1862-6254
- Scientific domain
- Crystallography; Electronics; Condensed state physics
- Publisher
- Wiley-VCH, Weinheim
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Author keyword
- 61.72.Tt 73.40.Lq 85.35.Gv 85.85.+j
- Keyword (fr)
- Commutateur Dispositif nanoélectromécanique Dopage Facteur qualité Fréquence résonance Jonction p i n Procédé fabrication Semiconducteur 8585
- Keyword (en)
- Selector switch Nanoelectromechanical device Doping Q factor Resonance frequency p i n junctions Manufacturing process Semiconductor materials
- Keyword (es)
- Conmutador Dispositivo nanoelectromecánico Doping Factor calidad Frecuencia resonancia Procedimiento fabricación Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F21 Micro- and nanoelectromechanical devices (mems/nems)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19172662
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssr.200701186 
https://dx.doi.org/10.1002/pssr.200701186
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