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Ta/Ni/Ta multilayered ohmic contacts on n-type SiC

Author
YANG, H1 ; PENG, T. H1 ; WANG, W. J1 ; ZHANG, D. F1 ; CHEN, X. L1
[1] Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Source

Applied surface science. 2007, Vol 254, Num 2, pp 527-531, 5 p ; ref : 26 ref

ISSN
0169-4332
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
68.55.-a; 73.40.Cg SiC; Ohmic contact; Electrical properties; Carbon vacancy
Keyword (fr)
Analyse RX Carbure de silicium Contact ohmique Diffraction RX Dissociation Epaisseur Formation défaut Lacune Microscopie électronique balayage Microstructure Multicouche Métallisation Nickel Recuit thermique Résistance contact Spectrométrie Auger Structure surface Tantale C Si Ni SiC Ta Composé minéral Métal transition
Keyword (en)
X-ray analysis Silicon carbide Ohmic contacts XRD Dissociation Thickness Defect formation Vacancies Scanning electron microscopy Microstructure Multilayers Metallizing Nickel Thermal annealing Contact resistance AES Surface structure Tantalum Inorganic compounds Transition elements
Keyword (es)
Silicio carburo Formación defecto Recocido térmico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40C Contact resistance, contact potential

Pascal
001 Exact sciences and technology / 001C Chemistry / 001C04 Analytical chemistry / 001C04C Spectrometric and optical methods

Pacs
7340C Contact resistance, contact potential

Pacs
8280P Electron spectroscopy (x-ray photoelectron (XPS), Auger electron spectroscopy(AES), etc.)

Discipline
Analytical chemistry Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19209241

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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