Modified polymer architecture for immersion lithography
- Author
- SANG SOO KIM1 ; JEONG WOO KIM1 ; CHEOL KYU BOK2 ; MOON, Seung-Chan2 ; JUNG YOUL LEE1 ; SEUNG KEUN OH1 ; SANG HYANG LEE1 ; JUNG WOO KIM1 ; JAE WOO LEE1 ; DEOG BAE KIM1 ; KIM, Jaehyun1 ; KEUN DO BAN2
[1] Semiconductor Process Materials Division, Dongjin Semichem. Co., Ltd., 625-3, Yodang-Ri, Yanggam-Myun, Hwasung-Si, Kyungki-Do 445-930, Korea, Republic of
[2] Memory R&D Division, Hynix Semiconductor Co., Ltd., San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-Do, 467-701, Korea, Republic of - Conference title
- Advances in resist materials and processing technology XXIV (26-28 February, 2007, San Jose, California, USA)
- Conference name
- Advances in resist materials and processing technology (14 ; San Jose Ca 2007)
- Author (monograph)
- Lin, Qinghuang (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
SEMATECH (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65191W.1-65191W.12 ; ref : 30 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-6638-9
- Scientific domain
- Electronics; Optics; Physics; Polymers, paint and wood industries
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Electronique moléculaire Fabrication microélectronique Haute résolution Hydrophilie Largeur raie Lithographie Miniaturisation Mouillabilité Méthode immersion Nanoélectronique Photolithographie Polymère Radical libre Rugosité Résist
- Keyword (en)
- Molecular electronics Microelectronic fabrication High resolution Hydrophily Line width Lithography Miniaturization Wettability Immersion method Nanoelectronics Photolithography Polymer Free radical Roughness Resist
- Keyword (es)
- Electrónica molecular Fabricación microeléctrica Alta resolucion Hidrofilia Anchura raya espectral Litografía Miniaturización Remojabilidad Método immersión Nanoelectrónica Fotolitografía Polímero Radical libre Rugosidad Resistencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19224801
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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