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Initial process evaluation for next generation immersion technology node

Author
TOMITA, Tadatoshi1 ; NAFUS, Kathleen1 ; DE GROOT, Casper3 ; MOERMAN, Richard3 ; HATAKEYAMA, Shinichi1 ; KOSUGI, Hitoshi1 ; ENOMOTO, Masashi1 ; INOUE, Shin2 ; RUCK, Kirsten2 ; WEICHERT, Heiko2 ; MANTECON, Mireia Blanco3 ; STEGEN, Raf3
[1] Toyko Electron Kyshu Limited, 1-1 Fukuhara, Koshi-machi, Kikuchi-gun, Kumamoto 861-1116, Japan
[2] Tokyo Electron Europe, Moritzburger Weg 67 Haus, 01109 Dresden, Germany
[3] ASML Netherlands B.V.De Run 6501, 5504 DR Veldhoven, Netherlands
Conference title
Advances in resist materials and processing technology XXIV (26-28 February, 2007, San Jose, California, USA)
Conference name
Advances in resist materials and processing technology (14 ; San Jose Ca 2007)
Author (monograph)
Lin, Qinghuang (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
SEMATECH (Organiser of meeting)
Source

Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65192B.1-65192B.10 ; ref : 3 ref

CODEN
PSISDG
ISSN
0277-786X
ISBN
978-0-8194-6638-9
Scientific domain
Electronics; Optics; Physics; Polymers, paint and wood industries
Publisher
SPIE, Bellingham, Wash
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Evaluation performance Fabrication microélectronique Lithographie Loi Pareto Méthode mesure Plan expérience Taille critique
Keyword (en)
Performance evaluation Microelectronic fabrication Lithography Pareto distribution Measurement method Experimental design Critical size
Keyword (es)
Evaluación prestación Fabricación microeléctrica Litografía Ley Pareto Método medida Plan experiencia
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19224816

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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