The coming of age of tilt CD-SEM
- Author
- BUNDAY, B1 ; ALLGAIR, J1 ; SOLECKY, E2 ; ARCHIE, C2 ; ORJI, N. G3 ; BEACH, J4 ; ADAN, O5 ; PELTINOV, R5 ; BAR-ZVI, M5 ; SWYERS, J6
[1] International SEMATECH Manufacturing Initiative (ISMI), Austin, TX, 78741, United States
[2] IBM Microelectronics, East Fishkill, NY, 12533, United States
[3] National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, United States
[4] Advanced Technology Development Facility (ATDF), a SEMATECH Company, Austin, TX 78741, United States
[5] PDC Business group, Applied Materials, 9 Oppenheimer, Rehovot 76705, Israel
[6] PDC Business group, Applied Materials, Austin, TX, United States - Conference title
- Metrology, inspection, and process control for microlithography XXI (26 February- 1 March 2007, San Jose, California, USA)
- Conference name
- Metrology, inspection, and process control for microlithography (21 ; San Jose, California 2007)
- Author (monograph)
- Archie, Chas N (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
SEMATECH (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65181S.1-65181S.16 ; ref : 15 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-6637-2
- Scientific domain
- Electronics; Metrology and instrumentation; Optics; Physics
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Commande processus Explorateur faisceau Fabrication microélectronique Lithographie Microscopie force atomique Microscopie électronique balayage Miniaturisation Méthode mesure Photolithographie Photorésist Rayonnement UV extrême Taille critique Technologie autoalignée Transistor MOSFET Transistor grille double 0779
- Keyword (en)
- Process control Beam scanners Microelectronic fabrication Lithography Atomic force microscopy Scanning electron microscopy Miniaturization Measurement method Photolithography Photoresist Vacuum ultraviolet radiation Critical size Self aligned technology MOSFET Dual gate transistor
- Keyword (es)
- Control proceso Fabricación microeléctrica Litografía Microscopía fuerza atómica Microscopía electrónica barrido Miniaturización Método medida Fotolitografía Fotorresistencia Radiación ultravioleta extrema Tecnología rejilla autoalineada Transistor de compuerta doble
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G79 Scanning probe microscopes, components and techniques
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19224937
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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