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A unified approach to the large-signal and high-frequency theory of p-n-junctions

Author
BARYBIN, Anatoly A1 ; SANTOS, Edval J. P2
[1] Electronics Department, Saint-Petersburg State Electrotechnical University, 197376, Saint-Petersburg, Russian Federation
[2] Laboratory for Devices and Nanostructures, Departamento de Eletrônica e Sistemas, Universidade Federal de Pernambuco, CP 7800, 50670-000, Recife-PE, Brazil
Source

Semiconductor science and technology. 2007, Vol 22, Num 11, pp 1225-1231, 7 p ; ref : 7 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
Russian
Keyword (fr)
Admittance électrique Caractéristique courant tension Couche appauvrissement Equation diffusion Fonction Bessel Haute fréquence Jonction p n Mobilité porteur charge Modèle unifié Phénomène transport Propriété dynamique Recombinaison porteur charge
Keyword (en)
Electric admittance IV characteristic Depletion layer Diffusion equation Bessel functions High frequency p n junctions Carrier mobility Unified model Transport processes Dynamic properties Charge carrier recombination
Keyword (es)
Ecuación difusión Alta frecuencia Propiedad dinámica Recombinación portador carga
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40K Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19229592

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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