Limited reaction processing : growth of Si1-xGex/Si for heterojunction bipolar transistor applications
- Author
- HOYT, J. L; KING, C. A; KAMINS, T. I; NOBLE, D. B; GRONET, C. M; GIBBONS, J. F; SCOTT, M. P; LADERMAN, S. S; ROSNER, S. J; NAUKA, K; TURNER, J
Electronics Laboratories, Stanford CA 94305, United States - Conference name
- 1989 E-MRS conference. 3 (Strasbourg 1989-05-30)
- Source
Thin solid films. 1990, Vol 184, pp 93-106, 14 p ; ref : 27 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35J Surface and interface dynamics and vibrations
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19247339
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0040-6090(90)90402-Y 
https://dx.doi.org/10.1016/0040-6090(90)90402-Y
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