Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
- Author
- CALLEGARI, A; HOH, P. D; BUCHANAN, D. A; LACEY, D
IBM Thomas J. Watson res. cent., Yorktown Heights NY 10598, United States - Source
Applied physics letters. 1989, Vol 54, Num 4, pp 332-334, 3 p ; ref : 13 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Conductivité électrique Etat électronique interface Etude expérimentale Gallium Arséniure Gallium Oxyde Impureté Interface solide solide Niveau Fermi Semiconducteur Silicium Structure MOS
- Keyword (en)
- Inorganic compound Electrical conductivity Interface electron state Experimental study Gallium Arsenides Gallium Oxides Impurity Solid solid interface Fermi level Semiconductor materials Silicon MOS structure
- Keyword (es)
- Compuesto inorgánico Conductividad eléctrica Estado electrónico interfase Estudio experimental Galio Galio Impureza Interfase sólido sólido Nivel Fermi Semiconductor(material) Silicio Estructura MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19281339
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.100961 
https://dx.doi.org/10.1063/1.100961
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