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The applications of transmission electron microscopy to the characterization of metal thin films on silicon

Author
CHEN, L. J; LUR, W; CHENG, J. Y
National Tsing Hua univ., dep. materials sci. eng., Hsinchu, Taiwan, Province of China
Conference name
International Conference on Metallurgical Coatings. 16 (San Diego CA 1989-04-17)
Source

Thin solid films. 1990, Vol 191, Num 2, pp 221-237, 17 p ; ref : 67 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Keyword (fr)
Cinétique Contact métal semiconducteur Couche mince Dopage Epitaxie Etude expérimentale Implantation ion Manganèse Microscopie électronique transmission Métal transition Recuit Réaction interface Silicium Structure interface
Keyword (en)
Kinetics Semiconductor metal contact Thin film Doping Epitaxy Experimental study Ion implantation Manganese Transmission electron microscopy Transition metal Annealing Interface reaction Silicon Interface structure
Keyword (es)
Cinética Contacto metal semiconductor Capa fina Doping Epitaxia Estudio experimental Implantación ión Manganeso Microscopía electrónica transmisión Metal transición Recocido Reacción interfase Silicio Estructura interfaz
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy

Discipline
Metals. Metallurgy Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19296251

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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