Localization and interaction effects in GaAs/AlGaAs heterostructures modified by 4He-ion implantation
- Author
- TABORYSKI, R; VEJE, E; LINDELOF, P. E
H. C. Ørsted inst., physics lab., Copenhagen 2100, Denmark - Conference name
- EP2DS. International conference. 8 (Grenoble 1989-09-04)
- Source
Surface science. 1990, Vol 229, Num 1-3, pp 105-109, 5 p ; ref : 19 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19324585
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0039-6028(90)90845-Y 
https://dx.doi.org/10.1016/0039-6028(90)90845-Y
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