Role of discrete slab phonons in carrier relaxation in semiconductor quantum wells
- Author
- JAIN, J. K; DAS SARMA, S
Univ. Maryland, dep. physics & astronomy, College Park MD 20742, United States - Source
Physical review letters. 1989, Vol 62, Num 19, pp 2305-2308, 4 p ; ref : 13 ref
- CODEN
- PRLTAO
- ISSN
- 0031-9007
- Scientific domain
- Optics; Atomic molecular physics; Condensed state physics; Physics; Plasma physics
- Publisher
- American Physical Society, Ridge, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Etude théorique Mode phonon Phonon Puits quantique Semiconducteur Relaxation porteur charge
- Keyword (en)
- Theoretical study Phonon mode Phonon Quantum well Semiconductor materials
- Keyword (es)
- Estudio teórico Modo fonón Fonón Pozo cuántico Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19346480
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1103/PhysRevLett.62.2305 
https://dx.doi.org/10.1103/PhysRevLett.62.2305
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1103\/PhysRevLett.62.2305\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"Role of discrete slab phonons in carrier relaxation in semiconductor quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Physical review letters\";s:9:\"\u0000*\u0000stitle\";s:15:\"Phys. rev. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1989\";s:9:\"\u0000*\u0000volume\";s:2:\"62\";s:8:\"\u0000*\u0000issue\";s:2:\"19\";s:8:\"\u0000*\u0000spage\";s:4:\"2305\";s:8:\"\u0000*\u0000epage\";s:4:\"2308\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-9007\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"JAIN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"DAS SARMA, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRLTAO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:82:\"Role of discrete slab phonons in carrier relaxation in semiconductor quantum wells\";s:8:\"\u0000*\u0000place\";s:9:\"Ridge, NY\";s:6:\"\u0000*\u0000pub\";s:25:\"American Physical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1103\/PhysRevLett.62.2305\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"Role of discrete slab phonons in carrier relaxation in semiconductor quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Physical review letters\";s:9:\"\u0000*\u0000stitle\";s:15:\"Phys. rev. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1989\";s:9:\"\u0000*\u0000volume\";s:2:\"62\";s:8:\"\u0000*\u0000issue\";s:2:\"19\";s:8:\"\u0000*\u0000spage\";s:4:\"2305\";s:8:\"\u0000*\u0000epage\";s:4:\"2308\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-9007\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"JAIN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"DAS SARMA, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRLTAO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:82:\"Role of discrete slab phonons in carrier relaxation in semiconductor quantum wells\";s:8:\"\u0000*\u0000place\";s:9:\"Ridge, NY\";s:6:\"\u0000*\u0000pub\";s:25:\"American Physical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:27:\"10.1103\/PhysRevLett.62.2305\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1103\/PhysRevLett.62.2305\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"Role of discrete slab phonons in carrier relaxation in semiconductor quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Physical review letters\";s:9:\"\u0000*\u0000stitle\";s:15:\"Phys. rev. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1989\";s:9:\"\u0000*\u0000volume\";s:2:\"62\";s:8:\"\u0000*\u0000issue\";s:2:\"19\";s:8:\"\u0000*\u0000spage\";s:4:\"2305\";s:8:\"\u0000*\u0000epage\";s:4:\"2308\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-9007\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"JAIN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"DAS SARMA, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRLTAO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:82:\"Role of discrete slab phonons in carrier relaxation in semiconductor quantum wells\";s:8:\"\u0000*\u0000place\";s:9:\"Ridge, NY\";s:6:\"\u0000*\u0000pub\";s:25:\"American Physical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1103\/PhysRevLett.62.2305\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"Role of discrete slab phonons in carrier relaxation in semiconductor quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Physical review letters\";s:9:\"\u0000*\u0000stitle\";s:15:\"Phys. rev. lett\";s:7:\"\u0000*\u0000date\";s:4:\"1989\";s:9:\"\u0000*\u0000volume\";s:2:\"62\";s:8:\"\u0000*\u0000issue\";s:2:\"19\";s:8:\"\u0000*\u0000spage\";s:4:\"2305\";s:8:\"\u0000*\u0000epage\";s:4:\"2308\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-9007\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"JAIN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"J. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:12:\"DAS SARMA, S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PRLTAO\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:82:\"Role of discrete slab phonons in carrier relaxation in semiconductor quantum wells\";s:8:\"\u0000*\u0000place\";s:9:\"Ridge, NY\";s:6:\"\u0000*\u0000pub\";s:25:\"American Physical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
